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- IP address: 195.206.229.41
- Location: Slovenia
- Latitude: 46
- Longitude: 15
- Timezone: Europe/Ljubljana
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Mail.google.comThe Grain Refinement of Al-Si Alloys and the Cause of Si ...
The Al-Si system is a special case where additions of Si above a few percent poison grain refinement resulting in larger grain sizes. Consideration of the complicating effect of Si poisoning on the prediction of the grain size of these alloys and possible approaches to dealing with these complications are presented.
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Accounts.google.comEmail Verifier - Verify email address with free email ...
An email verifier, or email checker, is a tool to validate that an email address exists and can receive emails. Verifying is important before contacting new recipients to avoid bounces and protect your sender reputation. Hunter's Email Verifier does a complete check of email addresses, verifies if it appears publicly on the web and returns the ...
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Accounts.google.comGrain.si - WHOIS & Domain Info - DomainBigData
Grain.si is hosted in Slovenia. grain.si was created on 2009-03-02. Website IP is 91.240.216.61
Domainbigdata.com(PDF) Location- and Orientation-Controlled (100) and (110 ...
Location- and Orientation-Controlled (100) and (110) Single-Grain Si TFTs Without Seed Substrate
Academia.eduSingle-Grain Si TFTs Fabricated on a Precursor from Doctor ...
Printing is attractive for manufacturing flexible circuits. This manuscript presents our investigation of single-grain Si TFTs fabricated from printed liquid-Si, on a polyimide substrate with the maximum process temperature of 350 °C. The field-effect mobility is 460 cm2/Vs for electrons and 121 cm2/Vs for the holes. CMOS inverters were also fabricated.
Semanticscholar.orgSingle-Grain Gate-All-Around Si Nanowire FET Using Low ...
We introduce a single-grain gate-all-around (GAA) Si nanowire (NW) FET using the location-controlled-grain technique and several innovative low-thermal budget processes, including green nanosecond laser crystallization, far-infrared laser annealing, and hybrid laser-assisted salicidation, that keep the substrate temperature (Tsub) lower than 400 °C for monolithic three …
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Support.google.comIntegrated high performance (100) and (110) oriented ...
We report high performance (100) and (110) oriented single-grain thin-film-transistors (SG-TFTs) fabricated below 600°C without any seed substrate. The orientation has been contolled by ¼-Czochralski process with the excimer laser. Field-effect mobility of n-channel transistor is 998cm 2 /Vs for (100) SG-TFTs and 811cm 2 /Vs for (110) SG-TFTs.
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Scholar.google.comGrain Management, LLC | LinkedIn
Grain Management, LLC is a leading private investment firm that focuses on broadband infrastructure and technology companies that connect the world to the information economy. Founded in 2007 ...
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Helpdesk.irely.com(PDF) SPICE Modeling of Single-Grain Si TFTs using BSIMSOI ...
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Academia.eduLe Riz, ce grain si petit qui nourrit le monde by ...
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